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A method for compensating lithographic influence of EUV mask blank defects by an advanced genetic algorithm
Author(s): Ruixuan Wu; Lisong Dong; Rui Chen; Tianchun Ye; Yayi Wei
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Paper Abstract

Mask defectivity is a critical challenge to the high-volume production of extreme ultraviolet lithography (EUVL). In a similar way to the optical proximity correction (OPC), mask absorber pattern optimization could weaken the impact of defect on lithography. In order to compensate the amplitude and phase impact caused by the defects on the EUV mask blank, an advanced evolution strategy based on genetic algorithm (GA) combining with manufacturing rule check (MRC) is proposed to optimize the mask pattern. The influences of various defects on lithography are firstly summarized from mass simulation results, as well a novel method based on GA is proposed to compensate the negative impact by defects. Finally, the advantages of the proposed method in convergence efficiency and robustness are validated through comparing with differential evolution (DE) and original GA with simulations on contact patterns and logic patterns with the lithography simulator Sentaurus Lithography (Slitho).

Paper Details

Date Published: 26 September 2019
PDF: 12 pages
Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471U (26 September 2019); doi: 10.1117/12.2536796
Show Author Affiliations
Ruixuan Wu, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Lisong Dong, Institute of Microelectronics (China)
Rui Chen, Institute of Microelectronics (China)
Tianchun Ye, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Yayi Wei, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 11147:
International Conference on Extreme Ultraviolet Lithography 2019
Toshiro Itani; Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse, Editor(s)

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