Share Email Print

Proceedings Paper

Industrial photoresist development with the EUV laboratory exposure tool: mask fabrication, sensitivity and contrast
Author(s): Sascha Brose; Serhiy Danylyuk; Franziska Grüneberger; Maik Gerngroß; Jochen Stollenwerk; Matthias Schirmer; Peter Loosen
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Main application of the EUV laboratory exposure tool (EUV-LET) is the large-area patterning (cm2) of periodic nanostructures with half-pitches below 100 nm. Applications are found in various research fields (e.g. diffractive optical elements, anti-reflective coatings, artificial crystals, nanowires, biosensors) as well as in prototype development and small-batch production. Recently the working wavelength of the tool was changed from 10.9 nm to 13.5 nm in order to enable industrial photoresist development and resist characterization. In collaboration with the resist supplier Allresist GmbH we demonstrate how EUV photoresists can be effectively developed using a compact laboratory setup for rapid characterization of different resist formulations and development conditions. The collaboration provides a platform for identifying the needs of the industry and proves that the EUV-LET in research configuration can fulfill this challenging task. First part of this contribution focuses on the fabrication of multi-field resolution test masks. The extension of the developed phase-shifting mask fabrication process to line structures leads to several technological challenges that will be pointed out. Furthermore we present first contrast and sensitivity investigations for several resist formulations that will serve as a basis for upcoming resolution tests.

Paper Details

Date Published: 26 September 2019
PDF: 9 pages
Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471I (26 September 2019); doi: 10.1117/12.2536794
Show Author Affiliations
Sascha Brose, RWTH Aachen Univ. (Germany)
JARA (Germany)
Serhiy Danylyuk, RWTH Aachen Univ. (Germany)
JARA (Germany)
Franziska Grüneberger, Allresist GmbH (Germany)
Maik Gerngroß, Allresist GmbH (Germany)
Jochen Stollenwerk, RWTH Aachen Univ. (Germany)
JARA (Germany)
Fraunhofer Institute for Laser Technology (Germany)
Matthias Schirmer, Allresist GmbH (Germany)
Peter Loosen, RWTH Aachen Univ. (Germany)
JARA (Germany)
Fraunhofer Institute for Laser Technology (Germany)

Published in SPIE Proceedings Vol. 11147:
International Conference on Extreme Ultraviolet Lithography 2019
Toshiro Itani; Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?