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AlGaN/GaN HEMTs for the purposes of electronic applications
Author(s): Piotr A. Caban; Marek Wojcik; Jaroslaw Gaca; Piotr Knyps; Dominika Teklinska; Ewa Dumiszewska
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Paper Abstract

Aluminium nitride is particularly interesting due to its unique properties such as a wide and direct band gap as well as high thermal conductivity. High quality AlN epitaxial layers are needed in UV devices and are used as a buffer layer in the deposition of HEMTs. Its quality has an impact on further deposition as well as two dimensional electron gas properties for AlGaN/GaN HEMTs. It was observed that AlN has crucial impact on electrical as well as structural properties of AlGaN/GaN heterostructures.

Paper Details

Date Published: 6 November 2019
PDF: 6 pages
Proc. SPIE 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 111764Z (6 November 2019); doi: 10.1117/12.2536751
Show Author Affiliations
Piotr A. Caban, Institute of Electronic Materials Technology (Poland)
Marek Wojcik, Institute of Electronic Materials Technology (Poland)
Jaroslaw Gaca, Institute of Electronic Materials Technology (Poland)
Piotr Knyps, Institute of Electronic Materials Technology (Poland)
Dominika Teklinska, Institute of Electronic Materials Technology (Poland)
Ewa Dumiszewska, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 11176:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019
Ryszard S. Romaniuk; Maciej Linczuk, Editor(s)

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