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Proceedings Paper

Pattern dependent distortion and temperature variation in EUV mask
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Paper Abstract

Extreme ultraviolet lithography (EUVL) uses reflective optics due to the high absorption of EUV sources, and EUV masks consist of multiple layers of composites to increase reflectance. As repeated exposure proceeded, heat accumulation due to energy absorption and resulting heat deformation were observed in each layer constituting the EUV mask. In particular, the absorber is made of a material with high absorption rate, so the temperature accumulation and deformation are different depending on the part with and without the absorber. This means that thermal distortion can cause mask overlay and local critical dimension uniformity (LCDU) problems, resulting in lower process yields. In this paper, we will examine the temperature accumulation and heat deformation depending on the presence of absorber when electrostatic chuck (ESC) and hydrogen cooling are applied.

Paper Details

Date Published: 26 September 2019
PDF: 11 pages
Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471R (26 September 2019); doi: 10.1117/12.2536721
Show Author Affiliations
Chung-Hyun Ban, Hanyang Univ. (Korea, Republic of)
Eun-Sang Park, Hanyang Univ. (Korea, Republic of)
Ui-Jeong Ha, Hanyang Univ. (Korea, Republic of)
Chae-Yun Lim, Hanyang Univ. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 11147:
International Conference on Extreme Ultraviolet Lithography 2019
Toshiro Itani; Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse, Editor(s)

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