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Influence of high temperature annealing on AC electric properties of SiO2 thin layers implanted with In and Sb ions
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Paper Abstract

This paper presents results of AC measurements of resistance Rp, phase angle θ, capacity Cp and loss tangent tgδ in dependences on frequency and temperature for InSb-SiO2/Si nanocomposite, immediately after preparation and annealed at 1273 K. The material was obtained by the In+ and Sb+ ions implantation into a SiO2 thin layer. Using obtained parameters frequency dependence of conductivity σ, real and imaginary components of permittivity were determined. This work refers to the hopping mechanism of conductivity and relaxation mechanisms of prepared material.

Paper Details

Date Published: 6 November 2019
PDF: 6 pages
Proc. SPIE 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 111764U (6 November 2019); doi: 10.1117/12.2536668
Show Author Affiliations
Karolina Czarnacka, Lublin Univ. of Technology (Poland)
Tomasz N. Koltunowicz, Lublin Univ. of Technology (Poland)
Aleksander K. Fedotov, Belarusian State Univ. (Belarus)


Published in SPIE Proceedings Vol. 11176:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019
Ryszard S. Romaniuk; Maciej Linczuk, Editor(s)

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