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Proceedings Paper

Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substrates
Author(s): P. Firek; M. Waskiewicz; K. Zdunek; J. Szmidt; R. Chodun; K. Nowakowska-Langier
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Paper Abstract

The AlN films were deposited using magnetron (Φ = 100 mm) and pulse power supplier (f = 100 kHz, with modulation of f = 2 kHz; current 3 A). Deposition processes were carried out at pressure of 2 Pa and using Ar/N2 gas mixture. The films were deposited on n-type silicon wafers located in parallel to aluminum target, keeping substrate-target distance at 15 cm. Round, titanium electrodes were evaporated on the top of deposited layers. Thus, metal-insulator-semiconductor (MIS) structures were created with aluminum nitride thin films playing the role of the insulator. Measurements of current-voltage (I-V) characteristics of MIS structures after annealing in different temperatures (300°C, 500°C), allowed to determine the leakage current density and critical electric field intensity (EBR) of investigated layers. Capacitance-voltage (C-V) measurements of the structures allowed to obtain the dielectric constant value (εri) of the films. Ellipsometric measurements allowed to obtain properties of deposited layer like thickness (29 nm), refraction index (1.855) and energy band gap (5.667 eV). Films’ microstructure was additionally studied using scanning electron microscope (SEM) and grazing X-ray diffraction (GXRD).

Paper Details

Date Published: 6 November 2019
PDF: 7 pages
Proc. SPIE 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 111764R (6 November 2019); doi: 10.1117/12.2536649
Show Author Affiliations
P. Firek, Warsaw Univ. of Technology (Poland)
M. Waskiewicz, Warsaw Univ. of Technology (Poland)
K. Zdunek, Warsaw Univ. of Technology (Poland)
The Andrzej Soltan Institute for Nuclear Studies (Poland)
J. Szmidt, Warsaw Univ. of Technology (Poland)
R. Chodun, Warsaw Univ. of Technology (Poland)
K. Nowakowska-Langier, The Andrzej Soltan Institute for Nuclear Studies (Poland)


Published in SPIE Proceedings Vol. 11176:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019
Ryszard S. Romaniuk; Maciej Linczuk, Editor(s)

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