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Proceedings Paper

The systematic analysis of epitaxial self-assembled GaN/AlN QDs in S-K method by MOCVD
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Paper Abstract

The GaN/AlN QDs with different height and density are grown by MOCVD in Stranski-Krastanov (S-K) method. The growing of self-assembly GaN quantum dots (QDs) in S-K method is attributed to six key growth parameters of Ⅴ/Ⅲ ratio, growth interruption, growth duration, flow rate, growing temperature and the NH3 protective atmosphere during cooling down. The surface free energy and GaN deposition amount on the growth front are modulated by adjusting the 6 conditions in epitaxial process of GaN QDs. The influence of the six growth factors on GaN QDs and the mechanism of which are systematically analyzed, the appropriate growth windows of each factor are obtained by optimizing experiments. The uncapped GaN QDs possess excellent photoluminescence performance.

Paper Details

Date Published: 19 November 2019
PDF: 9 pages
Proc. SPIE 11184, Optoelectronic Devices and Integration VIII, 111840Y (19 November 2019); doi: 10.1117/12.2536642
Show Author Affiliations
Zhiqiang Qi, Huazhong Institute of Electro-Optics (China)
Haocheng Sun, Huazhong Institute of Electro-Optics (China)
Wenliang Hu, Huazhong Institute of Electro-Optics (China)


Published in SPIE Proceedings Vol. 11184:
Optoelectronic Devices and Integration VIII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang; Daoxin Dai, Editor(s)

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