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Realization of beam shaping using VCSEL incorporating a high-contrast subwavelength grating
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Paper Abstract

In this paper, the far-field characteristic of the vertical-cavity surface-emitting laser (VCSEL) incorporating a highcontrast subwavelength grating (HCG) is analyzed by finite-difference time-domain (FDTD) method. Full three-dimensional simulations are carried out by utilizing FDTD solutions software. We study the parameters of HCG made from GaAs/AlOx which is defined by wet oxidation of an Al0.98Ga0.02As spacer layer. We have simulated HCG-VCSELs with different HCG periods and oxide aperture diameters. Various far-field patterns including single-lobe, double-lobe, triple-lobe shapes are obtained with the designed HCG-VCSEL. More interestingly, by tuning the HCG periods and the oxide aperture diameter, the far-field emission patterns transform from double-lobe to single-lobe shapes. By proper design of the two parameters, one can obtain Gaussian-like beam outputs, double-lobe or multi-lobe beams. The fullwidth half-maximum (FWHM) of the far-field divergent angle of the Gaussian-like fundamental mode obtained with grating periods of 23 and oxide aperture diameter of 8 μm is less than 5 degree. This opens a new path for engineering a VCSEL’s emission properties and provides guideline for actual device fabrication.

Paper Details

Date Published: 19 November 2019
PDF: 6 pages
Proc. SPIE 11182, Semiconductor Lasers and Applications IX, 111820G (19 November 2019); doi: 10.1117/12.2536582
Show Author Affiliations
Pingping Qiu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Beijing Univ. of Technology (China)
Ming Li, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Beijing Univ. of Technology (China)
Yiyang Xie, Beijing Univ. of Technology (China)
Qiang Kan, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Beijing Univ. of Technology (China)


Published in SPIE Proceedings Vol. 11182:
Semiconductor Lasers and Applications IX
Ning Hua Zhu; Werner H. Hofmann; Jian-Jun He, Editor(s)

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