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Proceedings Paper

New coater/developer technologies for CD control and defectivity reduction towards 5 nm and smaller nodes
Author(s): Arnaud Dauendorffer; Yuya Kamei; Shinichiro Kawakami; Makoto Muramatsu; Kathleen Nafus; Akihiro Sonoda; Philippe Foubert
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Paper Abstract

Extreme ultraviolet (EUV) lithography is now being introduced for the mass production of 7 nm process. In order to meet process requirements for 7 nm node, continuous work on coater/developer has been done to improve CD uniformity and defectivity. However, further improvements are still required especially for 5 nm or smaller nodes because of the increasing impact of stochastic failures. 2 The probability of such failures quickly increases with CD size, resulting in a very narrow defect process window. Therefore, strict control of CD is getting crucial to ensure stable yield in the future nodes. In this paper, optimization of processes has been explored to improve not only local CD variations, but also wafer uniformity and stability across batch processing. We will also present our latest technologies for the reduction of in-film particles in coated films and the optimization of development/rinse process for the reduction of residues and collapses.

Paper Details

Date Published: 7 October 2019
PDF: 10 pages
Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471N (7 October 2019); doi: 10.1117/12.2536470
Show Author Affiliations
Arnaud Dauendorffer, Tokyo Electron Kyushu Ltd. (Japan)
Yuya Kamei, Tokyo Electron Kyushu Ltd. (Japan)
Shinichiro Kawakami, Tokyo Electron Kyushu Ltd. (Japan)
Makoto Muramatsu, Tokyo Electron Kyushu Ltd. (Japan)
Kathleen Nafus, Tokyo Electron Kyushu Ltd. (Japan)
Akihiro Sonoda, Tokyo Electron Kyushu Ltd. (Japan)
Philippe Foubert, IMEC (Belgium)


Published in SPIE Proceedings Vol. 11147:
International Conference on Extreme Ultraviolet Lithography 2019
Toshiro Itani; Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse, Editor(s)

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