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Proceedings Paper

Ultrafast and ultrabroadband photocurrent microscopy resolves dynamics driving 2D-material photosensors and amorphous oxide thin-film transistors (Conference Presentation)

Paper Abstract

Despite comparatively poor interlayer conductivity photosensors of few-layer semiconducting 2D transition metal dichalcogenides (TMDCs) can be both fast (<70 ps) and highly efficient (IQE>50%). To understand the unexpected result, we use tunable E-fields to isolate the dynamics of interlayer electron-hole dissociation using time-space resolved photocurrent microscopy on semiconducting TMDCs and thin-film transistors. We show how this novel scanning microscopy approach, combines ultrafast photocurrent and transient absorption to identify new long-lived and metastable interlayer electronic states in emerging twisted and stacked 2D and thin-film devices.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128818 (10 March 2020); doi: 10.1117/12.2536441
Show Author Affiliations
Kyle T. Vogt, Oregon State Univ (United States)
George Mattson, Oregon State Univ. (United States)
Matt W. Graham, Oregon State Univ. (United States)


Published in SPIE Proceedings Vol. 11288:
Quantum Sensing and Nano Electronics and Photonics XVII
Manijeh Razeghi; Jay S. Lewis; Giti A. Khodaparast; Pedram Khalili, Editor(s)

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