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Proceedings Paper

UV-LED activated semiconductor sensors with tailored structure
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Paper Abstract

A sensitive 1D single crystal ZnO nanostructure gas sensor decorated with Pt nanoparticles was prepared to detect low concentrations of toxic gases at room temperature under UV-LED irradiation. The developed UV-LED activated sensors have a variety of advantages, compared to the traditional high temperature chemi-resistive metal oxide semiconductor (MOS) sensors, such as higher stability, smaller size, lower preparation time, and the ability to safely detect flammable gases. The developed sensing materials were characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) analyses. To obtain a visual evidence of Pt nanoparticles on the surface of ZnO nanowires, high-resolution transmission electron microscopy (HRTEM) and high-angle annular dark-field (HAADF) STEM were employed. The gas sensing results indicated a significant increase (an order of magnitude) in sensor response toward NO2 as a model gas, compared to pristine ZnO sample mainly due to charge carrier enhancement. The effect of UV irradiance was found to play an important role with respect to the sensor response and detection speed.

Paper Details

Date Published: 9 September 2019
PDF: 7 pages
Proc. SPIE 11086, UV and Higher Energy Photonics: From Materials to Applications 2019, 110860X (9 September 2019); doi: 10.1117/12.2536320
Show Author Affiliations
Ehsan Espid, The Univ. of British Columbia (Canada)
Babak Adeli, The Univ. of British Columbia (Canada)
Fariborz Taghipour, The Univ. of British Columbia (Canada)

Published in SPIE Proceedings Vol. 11086:
UV and Higher Energy Photonics: From Materials to Applications 2019
Gilles Lérondel; Yong-Hoon Cho; Atsushi Taguchi; Satoshi Kawata, Editor(s)

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