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Proceedings Paper

Room-temperature monolithic quantum-cascade laser sources operating from 1.1 to 1.5 THz
Author(s): Kazuue Fujita; Shohei Hayashi; Masahiro Hitaka; Akio Ito; Tatsuo Dougakiuchi; Wei Dong; Hiroyasu Fujiwara
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Paper Abstract

Terahertz quantum cascade laser sources with intra-cavity difference frequency generation are currently the only electrically-pumped monolithic semiconductor light sources operating at room temperature in the 1-6 THz spectral range. These devices demonstrated drastic improvements in performance in the past several years and can produce broadband and narrow-linewidth single-mode terahertz emission with power output sufficient for spectroscopic applications. Recent efforts in the wavefunction engineering using an active region design based on a dual-upper-state concept led to a significant enhancement of the optical nonlinearity of the active region for efficient terahertz generation. Dual-upper-state terahertz quantum cascade laser sources exhibit the power of >0.3 mW. Here, we report low frequency generation from terahertz quantum cascade laser sources based on intra-cavity nonlinear frequency mixing. In order to achieve higher nonlinear susceptibility in low frequency region, we design a long wavelength dual-upper-state active region in which transition dipole moments are increased. A fabricated device with distributed feedback grating demonstrates a THz peak output power of 40 μW at room temperature, with multi-mode THz emission at a frequency of 1.4 THz. Besides, a device produces THz output power of >250 μW at 110 K, which is higher output power, compared to low- frequency THz-QCLs at liquid helium temperature.

Paper Details

Date Published: 18 November 2019
PDF: 5 pages
Proc. SPIE 11196, Infrared, Millimeter-Wave, and Terahertz Technologies VI, 111960P (18 November 2019); doi: 10.1117/12.2536271
Show Author Affiliations
Kazuue Fujita, Hamamatsu Photonics K.K. (Japan)
Shohei Hayashi, Hamamatsu Photonics K.K. (Japan)
Masahiro Hitaka, Hamamatsu Photonics K.K. (Japan)
Akio Ito, Hamamatsu Photonics K.K. (Japan)
Tatsuo Dougakiuchi, Hamamatsu Photonics K.K. (Japan)
Wei Dong, Hamamatsu Photonics K.K. (Japan)
Hiroyasu Fujiwara, Hamamatsu Photonics K.K. (Japan)

Published in SPIE Proceedings Vol. 11196:
Infrared, Millimeter-Wave, and Terahertz Technologies VI
Cunlin Zhang; Xi-Cheng Zhang; Masahiko Tani, Editor(s)

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