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Proceedings Paper • Open Access

Ga-free InAs/InAsSb type-II superlattice (T2SL) photodetector for high operating temperature in the midwave infrared spectral domain
Author(s): J. -P. Perez; Q. Durlin; P. Christol

Paper Abstract

We studied Ga-free InAs/InAsSb type-II superlattice (T2SL) in terms of period, thickness and antimony composition as a photon absorbing active layer (AL) of a suitable XBn structure for full mid-wavelength infrared domain (MWIR, 3- 5μm) detection. The SL photodetector structures were fabricated by molecular beam epitaxy (MBE) on n-type GaSb substrate and exhibited cut-off wavelength between 5μm and 5.5μm at 150K. Electro-optical and electrical results of the device are reported and compared to the usual InSb MWIR photodiode.

Paper Details

Date Published: 12 July 2019
PDF: 10 pages
Proc. SPIE 11180, International Conference on Space Optics — ICSO 2018, 111806E (12 July 2019);
Show Author Affiliations
J. -P. Perez, Institut d'Électronique et des Systèmes (France)
Q. Durlin, Institut d'Électronique et des Systèmes (France)
P. Christol, Institut d'Électronique et des Systèmes (France)


Published in SPIE Proceedings Vol. 11180:
International Conference on Space Optics — ICSO 2018
Zoran Sodnik; Nikos Karafolas; Bruno Cugny, Editor(s)

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