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Proceedings Paper

Recombination physics in III-nitrides and device implication from micro-LEDs to long-wavelength emitters (Conference Presentation)
Author(s): Aurelien David

Paper Abstract

We will present recent findings on the physics of III-nitride recombinations, including the demonstration of defect-assisted Auger recombination as a significant droop process, and the intricacies of low-current radiative recombinations, where alloy disorder and Coulomb interaction play a key role. We will discuss implications for future LED applications, from long-wavelength devices to low-power micro-LEDs.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113020V (9 March 2020); doi: 10.1117/12.2535805
Show Author Affiliations
Aurelien David, Soraa, Inc. (United States)


Published in SPIE Proceedings Vol. 11302:
Light-Emitting Devices, Materials, and Applications XXIV
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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