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Proceedings Paper

Study on spectral response characteristics of NEA GaAlAs/GaAs vacuum photodiode based on external electric field
Author(s): Rongguo Fu; Ga Zhang; Zhaoxi Liu; Guiyuan Wang; Tongchun Sun
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Paper Abstract

In this paper, GaAlAs/GaAs vacuum photodiodes are used to test the spectral response of different external electric fields, and the influence of external electric field on NEA GaAlAs/GaAs photocathode is analyzed. Based on the spectral response curves under different bias voltages, the external voltage increases and the corresponding spectral response sensitivity increases. As the bias voltage increases, the sensitivity of the spectral response increases slowly and gradually becomes saturated. This is mainly due to the fact that under the action of a strong field, the photoelectron obtains a sufficiently high energy to escape into the vacuum, resulting in a spectral response sensitivity tending to saturation.

Paper Details

Date Published: 6 December 2019
PDF: 6 pages
Proc. SPIE 11371, International Workshop on Thin Films for Electronics, Electro-Optics, Energy, and Sensors 2019, 113710D (6 December 2019); doi: 10.1117/12.2535708
Show Author Affiliations
Rongguo Fu, Nanjing Univ. of Science and Technology (China)
Ga Zhang, Nanjing Univ. of Science and Technology (China)
Zhaoxi Liu, Nanjing Univ. of Science and Technology (China)
Guiyuan Wang, ShuGuang Photoelectronic Corp. of Yangzhou (China)
Tongchun Sun, ShuGuang Photoelectronic Corp. of Yangzhou (China)


Published in SPIE Proceedings Vol. 11371:
International Workshop on Thin Films for Electronics, Electro-Optics, Energy, and Sensors 2019
Partha Banerjee; Karl Gudmundsson; Akhlesh Lakhtakia; Guru Subramanyam, Editor(s)

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