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Proceedings Paper

MPC model sensitivity analysis: model ambit vs. correction runtime
Author(s): Alex Zepka; John Valadez; Parikshit Kulkarni; Kohei Yanagisawa; Kota Kobayashi; Kiyoshi Kageyama
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Paper Abstract

Mask Process Correction (MPC) is becoming increasingly relevant as the industry moves toward more challenging technology nodes. Because running MPC on large layouts can be extremely resource intensive, it is important to strike a balance between the quality of the correction and the total turnaround time (TAT). This paper describes the results of applying a geometry-based MPC solution to a mask lithography process created at Toppan where the model is calibrated from AEI metrology data of patterns that accounts for beam blur, etch, and proximity effects present in the etched mask up to ~1 um. In this solution, the model calibration can result in different but equivalent predictors, i.e., the model parameters can differ while the overall error residuals (model RMS) can be nearly identical. The following sections probe a possible trade-off between correction quality and speed by testing how an MPC software based on edge movement behaves as the effective range of an enhanced multi-Gaussian mask model template is constrained.

Paper Details

Date Published: 27 June 2019
PDF: 10 pages
Proc. SPIE 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology, 1117808 (27 June 2019); doi: 10.1117/12.2535707
Show Author Affiliations
Alex Zepka, Synopsys Inc. (United States)
John Valadez, Synopsys Inc. (United States)
Parikshit Kulkarni, Synopsys Inc. (United States)
Kohei Yanagisawa, Toppan Printing Co., Ltd. (Japan)
Kota Kobayashi, Toppan Printing Co., Ltd. (Japan)
Kiyoshi Kageyama, Toppan Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 11178:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology
Akihiko Ando, Editor(s)

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