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Chrome mask fabrication on Al2O3 substrate for new generation devices based on AlGaN/GaN heterostructure
Author(s): Kornelia Indykiewicz; Bartłomiej Paszkiewicz; Agnieszka Zawadzka; Regina Paszkiewicz
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Paper Abstract

The goal of the conducted work was to fabricate chrome masks on Al2O3 substrates, which could be successfully applied to UV and DUV lithography. The technique is based on electron beam lithography and wet chrome etching in an ceric ammonium nitrate solution. The main advantage of the proposed fabrication method is a major decrease in exposition time due to more effective usage of electron energy. We will demonstrate the use of low electron energy exposition methods with PMMA/MA resist with applied doses of a few μC/cm2. To the best of the author’s knowledge, sapphire substrates have not been previously used in photomasks fabrication. So far, full photomasks sets based on Al2O3 substrates have been manufactured and applied to fabricate the pilot series of acoustic transducers in the AlGaN/GaN heterostructure for piezotronics applications.

Paper Details

Date Published: 29 August 2019
PDF: 9 pages
Proc. SPIE 11177, 35th European Mask and Lithography Conference (EMLC 2019), 1117715 (29 August 2019); doi: 10.1117/12.2535689
Show Author Affiliations
Kornelia Indykiewicz, Wrocław Univ. of Science and Technology (Poland)
Bartłomiej Paszkiewicz, Wrocław Univ. of Science and Technology (Poland)
Agnieszka Zawadzka, Wrocław Univ. of Science and Technology (Poland)
Regina Paszkiewicz, Wrocław Univ. of Science and Technology (Poland)


Published in SPIE Proceedings Vol. 11177:
35th European Mask and Lithography Conference (EMLC 2019)
Uwe F.W. Behringer; Jo Finders, Editor(s)

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