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Proceedings Paper

Progress in EUV resists for contact holes printing using EUV interference lithography
Author(s): Xiaolong Wang; Li-Ting Tseng; Iacopo Mochi; Michaela Vockenhuber ; Lidia van Lent-Protasova; Rolf Custers; Gijsbert Rispens; Rik Hoefnagels; Yasin Ekinci
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Paper Abstract

Using high-resolution extreme ultraviolet interference lithography (EUV-IL), we investigated contact hole/pillars printing performance of several EUV resist platforms for the high-NA EUV lithography. We compared the dose and local critical dimension uniformity (LCDU) of the three chemically-amplified resists (CARs) with the best performance for printing contact holes (CHs) at half pitch (HP) of 24 and 20 nm. One of the CARs showed the lowest LCDU, 2.3 and 2.2 nm with lowest dose 16.4 and 21.1 mJ/cm2 for HP 24 and 20 nm, respectively. With the inorganic resist we obtained 38.8 mJ/cm2 with an LCDU of 1.3 nm for HP 20 nm pillars. We have also studied the effects of the resist thickness and post-exposure baking (PEB) temperature on the dose and LCDU. These results show that there are promising CAR and non-CAR resists for CH printing towards high-NA EUVL.

Paper Details

Date Published: 29 August 2019
PDF: 8 pages
Proc. SPIE 11177, 35th European Mask and Lithography Conference (EMLC 2019), 111770U (29 August 2019); doi: 10.1117/12.2535678
Show Author Affiliations
Xiaolong Wang, Paul Scherrer Institut (Switzerland)
Li-Ting Tseng, Paul Scherrer Institut (Switzerland)
Iacopo Mochi, Paul Scherrer Institut (Switzerland)
Michaela Vockenhuber , Paul Scherrer Institut (Switzerland)
Lidia van Lent-Protasova, ASML Netherlands B.V. (Netherlands)
Rolf Custers, ASML Netherlands B.V. (Netherlands)
Gijsbert Rispens, ASML Netherlands B.V. (Netherlands)
Rik Hoefnagels, ASML Netherlands B.V. (Netherlands)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)

Published in SPIE Proceedings Vol. 11177:
35th European Mask and Lithography Conference (EMLC 2019)
Uwe F.W. Behringer; Jo Finders, Editor(s)

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