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Proceedings Paper

Estimating extremely low probability of stochastic defect in extreme ultraviolet lithography from critical dimension distribution measurement (Poster presentation)
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Paper Abstract

Projection lithography using extreme ultra-violet (EUV) light at 13.5-nm wavelength will be applied to the production of integrated circuits below 7 nm design-rules. In pursuit of further miniaturization, however, stochastic pattern defect problems have arisen, and monitoring such defect generation probabilities in extremely low range (<10-10) is indispensable. Here, we discuss a new method for predicting stochastic defect probabilities from a histogram of feature sizes for patterns several orders of magnitude fewer than the number of features to inspect. Based on our previously introduced probabilistic model of stochastic pattern defect, the defect probability is expressed as product sum of the probability for edge position and the probability that film defect covers the area between edges, and we describe the later as a function of edge position. The defect probabilities in the order between 10-7 ~ 10-5 were predicted from 105 measurement data for real EUV exposed wafers, suggesting the effectiveness of the model and its potential for defect inspection.

The manuscript version of this Poster Presentation can be viewed in the Journal of Micro/Nanolithography, MEMS, and MOEMS Vol. 18 · No. 2:

Paper Details

Date Published: 26 September 2019
PDF: 1 pages
Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471A (26 September 2019); doi: 10.1117/12.2535664
Show Author Affiliations
Hiroshi Fukuda, Hitachi High-Technologies Corp. (Japan)
Yoshinori Momonoi, Hitachi High-Technologies Corp. (Japan)
Kei Sakai, Hitachi High-Technologies Corp. (Japan)

Published in SPIE Proceedings Vol. 11147:
International Conference on Extreme Ultraviolet Lithography 2019
Toshiro Itani; Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse, Editor(s)

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