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Dual platform stepper/scanner-based overlay evaluation method
Author(s): P. Kulse; S. Jätzlau; K. Schulz; M. Wietstruck
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Paper Abstract

In this work we address the capability of an alternative overlay evaluation method for the entire BEOL-Process of IHP’s standard 0.25 and 0.13 μm SiGe:C BiCMOS technology. A dual lithography platform NIKON® NSR 210D/207D scanners and NIKON® NSR SF-150 i-Line stepper layer crossing and wafer bow related overlay issues will be discussed. Stack alignment marks, which serves the exposure alignment and overlay determination were introduced. A mismatch for overlay (x/y) |mean| + 3σ values below 8 nm between the KLA® ARCHER 100 overlay and both lithography tools could be demonstrated.

Paper Details

Date Published: 29 August 2019
PDF: 7 pages
Proc. SPIE 11177, 35th European Mask and Lithography Conference (EMLC 2019), 111770F (29 August 2019); doi: 10.1117/12.2535629
Show Author Affiliations
P. Kulse, IHP (Germany)
S. Jätzlau, IHP (Germany)
K. Schulz, IHP (Germany)
M. Wietstruck, IHP (Germany)


Published in SPIE Proceedings Vol. 11177:
35th European Mask and Lithography Conference (EMLC 2019)
Uwe F.W. Behringer; Jo Finders, Editor(s)

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