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Proceedings Paper

Continuous challenges for next era of lithography
Author(s): Takahiro Hiromatsu; Ryo Ohkubo; Hitoshi Maeda; Toru Fukui; Hiroaki Shishido; Kazunori Ono; Masahiro Hashimoto
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Paper Abstract

This paper shows the latest challenges facing mask blank evolution to support leading-edge lithography processes. ArF immersion lithography has been employing multi-pass exposures to exceed the physical diffraction limit. These photomasks demand very accurate overlay, higher NILS and best CD uniformity for wider process window. The subject was considered from two perspectives from a mask blank producer, which are the mask-making perspective and the wafer lithography perspective. To improve the overlay, we introduced the dedicated CDL (Charge Dissipation Layer) for improving mask registration error. From the lithography resolution perspective, we have developed a high-transmittance phase-shifter film for higher NILS. CDU stability point of view, we described “Superior pattern fidelity CAR”, “High ArF durability SiN phase-shifter” and “Transparent etching stopper”. The industry decided to move to EUV lithography. But there are still many challenges for optical lithography.

Paper Details

Date Published: 29 August 2019
PDF: 8 pages
Proc. SPIE 11177, 35th European Mask and Lithography Conference (EMLC 2019), 1117705 (29 August 2019); doi: 10.1117/12.2534910
Show Author Affiliations
Takahiro Hiromatsu, HOYA Group (Japan)
Ryo Ohkubo, HOYA Group (Japan)
Hitoshi Maeda, HOYA Group (Japan)
Toru Fukui, HOYA Group (Japan)
Hiroaki Shishido, HOYA Group (Japan)
Kazunori Ono, HOYA Group (Japan)
Masahiro Hashimoto, HOYA Group (Japan)


Published in SPIE Proceedings Vol. 11177:
35th European Mask and Lithography Conference (EMLC 2019)
Uwe F.W. Behringer; Jo Finders, Editor(s)

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