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Laser-produced plasma incoherent EUV light sources for high-volume manufacturing semiconductor lithography (Conference Presentation)

Paper Abstract

In this paper, we provide an overview of state-of-the-art technologies for incoherent laser-produced tin plasma extreme-ultraviolet (EUV) sources at 13.5nm with performance enabling high volume semiconductor manufacturing (HVM). The key elements to development of a stable and reliable source that also meet HVM throughput requirements and the technical challenges for further scaling EUV power to increase productivity are described. Improvements in availability of droplet generation and the performance of critical subsystems that contribute to EUV collection optics lifetime toward the one tera-pulse level, are shown. We describe current research activities and provide a perspective for EUV sources towards the future ASML Scanners.

Paper Details

Date Published: 9 September 2019
PDF
Proc. SPIE 11111, X-Ray Lasers and Coherent X-Ray Sources: Development and Applications XIII, 111110K (9 September 2019); doi: 10.1117/12.2534691
Show Author Affiliations
Michael Purvis, ASML US, LP (United States)
Igor V. Fomenkov, ASML US, LP (United States)
Alexander A. Schafgans, ASML US, LP (United States)
Peter Mayer, ASML US, LP (United States)
Klaus Hummler, ASML US, LP (United States)
Martijn H.A. Leenders, ASML US, LP (United States)
Yezheng Tao, ASML US, LP (United States)
Slava I. Rokitski, ASML US, LP (United States)
Jayson Stewart, ASML US, LP (United States)
Alex I. Ershov, ASML US, LP (United States)
Robert J. Rafac, ASML US, LP (United States)
Silvia De Dea, ASML US, LP (United States)
Georgiy O. Vaschenko, ASML US, LP (United States)
David C. Brandt, ASML US, LP (United States)
Daniel J. Brown, ASML US, LP (United States)


Published in SPIE Proceedings Vol. 11111:
X-Ray Lasers and Coherent X-Ray Sources: Development and Applications XIII
Annie Klisnick; Carmen S. Menoni, Editor(s)

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