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Proceedings Paper

The performance of mid-wave infrared HgCdTe e-avalanche photodiodes at SITP
Author(s): Huijun Guo; Yushun Cheng; Lu Chen; Chun Lin; Hao Li; Honglei Chen; Ruijun Ding; Li He
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Paper Abstract

HgCdTe has been shown to be the first semiconductor exhibiting single-carrier multiplication in avalanche photodiodes (APDs) up to gain values larger than 1000 and with close to zero excess noise. These results have opened a new windows for low-flux and versatile imaging. In this paper, we report the latest results on MWIR HgCdTe APDs manufactured at SITP. These APDs display a gain of 1000 around 10V reverse bias. The excess noise factor is between 1.2 to 1.45 up to gain of 100, and the quantum efficiency is more than 60% from 1μm wavelength to peak wavelength 4.2 μm. These results show that the technological processes used at SITP are well adapted to APD manufacturing. However, at present, the dark current starts increasing significantly faster than the gain at high bias, and then the device becomes dark current noise limited. APD gain performance was successfully modeled by the simulation of electrical characteristics used Synopsys Sentaurus based on Okuto-Crowell ionizaition coefficient model. Therefore, Sentaurus would be used as a powerful predictive tool for SITP technology and stress its reproducibility and optimize the devices .

Paper Details

Date Published: 17 May 2019
PDF: 8 pages
Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111702M (17 May 2019);
Show Author Affiliations
Huijun Guo, Shanghai Institute of Technical Physics (China)
Yushun Cheng, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Lu Chen, Shanghai Institute of Technical Physics (China)
Chun Lin, Shanghai Institute of Technical Physics (China)
Hao Li, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Honglei Chen, Shanghai Institute of Technical Physics (China)
Ruijun Ding, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 11170:
14th National Conference on Laser Technology and Optoelectronics (LTO 2019)
Jianqiang Zhu; Weibiao Chen; Zhenxi Zhang; Minlin Zhong; Pu Wang; Jianrong Qiu, Editor(s)

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