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Proceedings Paper

MIM thin film diode with excellent switching characteristics for LCD
Author(s): Huifen Huang; Daming Zhuang; Yunfen Liu; Minji Zhu; Haokang Zhang; Guoping Chen
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Paper Abstract

A Ta-Ta2O5-Ta MIM thin film diode for active-matrix LCD is described. The Ta2O5 thin film insulator layer of the MIM thin film diode were formed by anodizing sputtered tantalum oxide films (sputtering/anodization two- step process). Experimental results showed that the MIM diode using the two-step oxidized sputtered/anodized tantalum oxide films had the threshold voltage as low as 5 V, the switching-on/off ratio about 105, and a more symmetrical I-V characteristic.

Paper Details

Date Published: 30 September 1996
PDF: 4 pages
Proc. SPIE 2892, Display Devices and Systems, (30 September 1996); doi: 10.1117/12.253367
Show Author Affiliations
Huifen Huang, Southeast Univ. (China)
Daming Zhuang, Southeast Univ. (China)
Yunfen Liu, Southeast Univ. (China)
Minji Zhu, Southeast Univ. (China)
Haokang Zhang, Southeast Univ. (China)
Guoping Chen, Southeast Univ. (China)

Published in SPIE Proceedings Vol. 2892:
Display Devices and Systems
Eric G. Lean; Zhiren Tian; Bao Gang Wu, Editor(s)

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