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Proceedings Paper

Impact of quantum capacitance on the characteristics of MoS2 field effect transistor
Author(s): Q. H. Tan; W. P. Ren; Q. J. Wang; Y. K. Liu
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Paper Abstract

MoS2 transistors with SiO2 gate insulators were fabricated from the experiment. The Raman and Photoluminescence of monolayer MoS2 and the electrical and photoelectric properties of prepared MoS2 transistors were investigated. Notably, the electrical performance model MoS2 transistor was carried out by considering the quantum effect of capacity building of MoS2 channel, and comparison analysis according to the result of simulation and experiment results, the model is suitable for the system study of MoS2 transistor. These results suggest that MoS2 transistors are suitable for nanoelectronics and optoelectronics devices.

Paper Details

Date Published: 17 May 2019
PDF: 5 pages
Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 1117028 (17 May 2019); doi: 10.1117/12.2533596
Show Author Affiliations
Q. H. Tan, Yunnan Normal Univ. (China)
W. P. Ren, Yunnan Normal Univ. (China)
Q. J. Wang, Yunnan Normal Univ. (China)
Y. K. Liu, Yunnan Normal Univ. (China)

Published in SPIE Proceedings Vol. 11170:
14th National Conference on Laser Technology and Optoelectronics (LTO 2019)
Jianqiang Zhu; Weibiao Chen; Zhenxi Zhang; Minlin Zhong; Pu Wang; Jianrong Qiu, Editor(s)

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