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Proceedings Paper

Preparation of low-resistance tunnel junction for high efficiency multi-junction semiconductor laser diodes
Author(s): Zexu Yuan; Jianjun Li; Yonggang Zou; Menghuan Wang; Jie Fan; Zhenyu Wen; Hongkang Cao; Jun Deng; Jun Han; Xiaohui Ma
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Paper Abstract

Low reverse-bias series resistance tunnel junctions (TJs) are the key to improving the performances of high efficiency multi-junction semiconductor laser diodes (MJLDs). In this paper, InGaAs QW TJ and InGaAs DQW TJ with single InGaAs layer and double InGaAs layers inserted into GaAs TJs separately, are proposed. TJ chips were fabricated by metal organic chemical vapor deposition (MOCVD) technology and semiconductor process. The measurement results of the devices display that the operating voltage of the InGaAs QW TJ and the InGaAs DQW TJ is lower than that of the GaAs TJ under the same injection current, whether it is a small current or a large current, and the InGaAs DQW TJ operating voltage is lower than that of the InGaAs QW TJ. Both GaAs TJ and InGaAs DQW TJ were applied to 1060 nm dual active region semiconductor laser diode. The ridge lasers with a strip width of 100μm and a cavity length of 2 mm were fabricated. The working voltage is reduced from 3.81 V to 3.38 V at 1 A drive current. Further experimental results indicate that the reverse-bias series resistance of InGaAs QW TJ and InGaAs DQW TJ is lower than that of GaAs TJ, and the performances of InGaAs DQW TJ are the best. This is of great significance to reduce the heat loss of MJLDs and improve its performances.

Paper Details

Date Published: 17 May 2019
PDF: 8 pages
Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111701L (17 May 2019);
Show Author Affiliations
Zexu Yuan, Beijing Univ. of Technology (China)
Jianjun Li, Beijing Univ. of Technology (China)
Yonggang Zou, Changchun Univ. of Science and Technology (China)
Menghuan Wang, Beijing Univ. of Technology (China)
Jie Fan, Changchun Univ. of Science and Technology (China)
Zhenyu Wen, Beijing Univ. of Technology (China)
Hongkang Cao, Beijing Univ. of Technology (China)
Jun Deng, Beijing Univ. of Technology (China)
Jun Han, Beijing Univ. of Technology (China)
Xiaohui Ma, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 11170:
14th National Conference on Laser Technology and Optoelectronics (LTO 2019)
Jianqiang Zhu; Weibiao Chen; Zhenxi Zhang; Minlin Zhong; Pu Wang; Jianrong Qiu, Editor(s)

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