Share Email Print

Proceedings Paper

Control of saturable absorption of topological insulator Bi2Se3 by electron and hole doping
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this work, few layers of Bi2Se3 is chemically treated, in which the AuCl3 solution is used for oxidation reaction to form p-doping, and BV solution (benzyl dichloride) is put to form n-doping to change material properties. We used pumpprobe system to verify the effect of doping on Bi2Se3 materials. In addition, the nonlinear saturable absorption of the material is also controlled. Through the I-scan test, we found that the saturable absorption has diverse responses to different wavelengths and doping conditions. By doping, the Fermi level of the material can be adjusted to control the saturable absorption of the material, which can be applied to the mode-locked laser. The weakened saturable light intensity can make the mode-locked pulse easier to generate.

Paper Details

Date Published: 17 May 2019
PDF: 5 pages
Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111701J (17 May 2019); doi: 10.1117/12.2533413
Show Author Affiliations
Runlin Miao, National Univ. of Defense Technology (China)
Yuze Hu, National Univ. of Defense Technology (China)
Tian Jiang, National Univ. of Defense Technology (China)

Published in SPIE Proceedings Vol. 11170:
14th National Conference on Laser Technology and Optoelectronics (LTO 2019)
Jianqiang Zhu; Weibiao Chen; Zhenxi Zhang; Minlin Zhong; Pu Wang; Jianrong Qiu, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?