Quantum technologies containing key GaN laser components will enable a new generation of precision sensors, optical atomic clocks and secure communication systems for many applications such as next generation navigation, gravity mapping and timing since the AlGaInN material system allows for laser diodes to be fabricated over a wide range of wavelengths from the u.v. to the visible. We report our latest results on a range of AlGaInN diode-lasers targeted to meet the linewidth, wavelength and power requirements suitable for optical clocks and cold-atom interferometry systems. This includes the [5s²S_1/2-5p²P_1/2] cooling transition in strontium+ ion optical clocks at 422 nm, the [5s₂ ¹S₀-5p¹P₁] cooling transition in neutral strontium clocks at 461 nm and the [5s² s_1/2 – 6p²P_3/2] transition in rubidium at 420 nm. Several approaches are taken to achieve the required linewidth, wavelength and power, including an extended cavity laser diode (ECLD) system and an on-chip grating, distributed feedback (DFB) GaN laser diode.

Date Published: 29 October 2019
PDF: 7 pages
Proc. SPIE 11167, Quantum Technologies and Quantum Information Science V, 111670L (29 October 2019);

Published in SPIE Proceedings Vol. 11167:
Quantum Technologies and Quantum Information Science V
Mark T. Gruneisen; Miloslav Dusek; Paul M. Alsing; John G. Rarity, Editor(s)