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Proceedings Paper

Development of massive parallel electron beam write system
Author(s): Masayoshi Esashi; Hiroshi Miyaguchi; Akira Kojima; Naokatsu Ikegami; Nobuyoshi Koshida; Masanori Sugata; Hideyuki Ohyi
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Paper Abstract

Prototype of Massively Parallel Electron Beam Write (MPEBW) system was developed for mask less lithography. A 100×100 array of nanocrystalline-silicon (nc-Si) electron emitter is controlled by an active matrix driving LSI. The LSI receives external writing bitmap data, and switches 100×100 electron beamlets on/off. The operation of the LSI was confirmed and 1/100 reduction electron optic system using the active matrix emitter array was fabricated. A 17×17 nc-Si emitter array was assembled with a 1:1 exposure test system and driven by commercially available display driver LSIs. The active matrix electron beam (EB) exposure was confirmed.

Paper Details

Date Published: 27 June 2019
PDF: 4 pages
Proc. SPIE 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology, 111780B (27 June 2019);
Show Author Affiliations
Masayoshi Esashi, Tohoku Univ. (Japan)
Hiroshi Miyaguchi, Tohoku Univ. (Japan)
Akira Kojima, Tohoku Univ. (Japan)
Naokatsu Ikegami, Tohoku Univ. (Japan)
Nobuyoshi Koshida, Tokyo Univ. of Agriculture and Technology (Japan)
Masanori Sugata, Crestec Corp. (Japan)
Hideyuki Ohyi, Crestec Corp. (Japan)


Published in SPIE Proceedings Vol. 11178:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology
Akihiko Ando, Editor(s)

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