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Proceedings Paper

1.2-um InAs/GaAs high-density quantum dot laser
Author(s): Fu-Hui Shao; Yi Zhang; Xiang-Bin Su; Hai-Qiao Ni; Yu Zhang; Ying-Qiang Xu; Zhi-Chuan Niu
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Paper Abstract

Here we report the growth method of InGa/GaAs quantum dot (QD) with differnet QD density by manipulating InAs deposition rate from 0.065 ML/s to 0.1 ML/s. Chose the highest density QD as the active region and grow multilayer InAs/GaAs QD with high uniform. Then fabricate a narrow ridge waveguide laser by semiconductor process. The rigid waveguide is 1.8 um high and 5 um wide, and the cavity length is 1mm. The output power of this narrow-rigid laser is 164 mW and central wavelength is 1204.6 nm when the injection current is 0.5 A at 15°C. The threshold current is as low as 35 mA, and threshold current density is 1939 A/cm2.

Paper Details

Date Published: 17 May 2019
PDF: 4 pages
Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 1117014 (17 May 2019);
Show Author Affiliations
Fu-Hui Shao, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yi Zhang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Xiang-Bin Su, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Hai-Qiao Ni, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yu Zhang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Ying-Qiang Xu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Zhi-Chuan Niu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 11170:
14th National Conference on Laser Technology and Optoelectronics (LTO 2019)
Jianqiang Zhu; Weibiao Chen; Zhenxi Zhang; Minlin Zhong; Pu Wang; Jianrong Qiu, Editor(s)

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