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Proceedings Paper

Radiation-induced degradation of optoelectronic sensors
Author(s): C. Inguimbert; T. Nuns; D. Hervé; A. Vriet; J. Barbero; J. Moreno; A. Nedelcu; S. Ducret; O. Saint-Pé; F. Larnaudie; O. Gilard; C. Aicardi
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Paper Abstract

Space system undergo particularly hard natural radiation environment, but can also potentially be subject to the radiations injected in low earth orbit by the explosion of a nuclear weapons. The increasing use of optoelectronic components in space systems makes the risk assessment regarding the radiation effects of an increasing interest. This paper presents recent results about the degradation of optoelectronic devices in term of atomic displacements. This paper Most of this work has been developed under the EDA contract JIP-ICET2 A-1341-RT-GP within the CapTech Technologies for Components and Modules’ (TCM) in EDA. (Tracking #: SD102-11)

Paper Details

Date Published: 9 October 2019
PDF: 14 pages
Proc. SPIE 11159, Electro-Optical and Infrared Systems: Technology and Applications XVI, 111590N (9 October 2019); doi: 10.1117/12.2532289
Show Author Affiliations
C. Inguimbert, ONERA - DPHY (France)
T. Nuns, ONERA - DPHY (France)
D. Hervé, SODERN (France)
A. Vriet, SODERN (France)
J. Barbero, Alter Technology (Spain)
J. Moreno, Alter Technology (Spain)
A. Nedelcu, LYNRED (France)
S. Ducret, LYNRED (France)
O. Saint-Pé, Airbus Defence and Space (France)
F. Larnaudie, Airbus Defence and Space (France)
O. Gilard, French Space Agency - CNES (France)
C. Aicardi, French Space Agency - CNES (France)

Published in SPIE Proceedings Vol. 11159:
Electro-Optical and Infrared Systems: Technology and Applications XVI
Duncan L. Hickman; Helge Bürsing, Editor(s)

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