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Proceedings Paper

1.3-um and 1.55-um InGaAsP/InP quantum well light-emitting diodes with narrow beam divergence
Author(s): Xiaoyu Ma; Shutang Wang; Feike Xiong; Liang Guo; Zhongming Wang; Lingjuan Zhao; Liming Wang; Lianhui Chen
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Paper Abstract

1.3 micrometers and 1.55 micrometers InGaAsP/InP quantum well (QW) light emitting diodes (LEDs) with narrow beam divergence grown by low pressure metal organic chemical vapor deposition are reported in this paper. 1.3 micrometers and 1.55 micrometers QW LEDs with beam divergence of 30 - 45 degree, chip output power of more than 300 (mu) W and 200 (mu) W, and single mode fiber output power of 60 (mu) W and 40 (mu) W were obtained by optimizing the device structure parameters.

Paper Details

Date Published: 30 September 1996
PDF: 3 pages
Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); doi: 10.1117/12.253186
Show Author Affiliations
Xiaoyu Ma, Institute of Semiconductors (China)
Shutang Wang, Institute of Semiconductors (China)
Feike Xiong, Institute of Semiconductors (China)
Liang Guo, Institute of Semiconductors (China)
Zhongming Wang, Institute of Semiconductors (China)
Lingjuan Zhao, Institute of Semiconductors (China)
Liming Wang, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 2891:
Integrated Optoelectronics
Ray T. Chen; Won-Tien Tsang; BingKun Zhou, Editor(s)

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