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Evolution of dislocation/stacking fault defects during two-step annealing (Conference Presentation)

Paper Abstract

Two-step annealing (i.e. first in Cd vapor and second in Te vapor) is essential process for obtaining high quality CdZnTe (CZT) materials. During the post-growth two-step annealing, main defects in CZT, that is, Te inclusions, were successfully removed while maintaining its resistivities. Additionally, commonly observed nano-scale defects, that is, dislocation and stacking faults in CZT were also disappeared. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra. In this presentation, we will present the evolution of nano-scale defects in annealing process through in-situ transmission electron microscopy (TEM) measurement.

Paper Details

Date Published: 17 September 2019
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Proc. SPIE 11114, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI, 1111403 (17 September 2019); doi: 10.1117/12.2531675
Show Author Affiliations
Kihyun Kim, Korea Univ. (Korea, Republic of)
Eunhye Kim, Korea Univ. (Korea, Republic of)
Yonghoon Kim, Korea Univ. (Korea, Republic of)
Beomjun Park, Korea Univ. (Korea, Republic of)
Aleksey Bolotnikov, Brookhaven National Lab. (United States)
Ralph James, Savannah River National Lab. (United States)


Published in SPIE Proceedings Vol. 11114:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI
Ralph B. James; Arnold Burger; Stephen A. Payne, Editor(s)

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