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Time dependent boron implantation effect on the dopant solubility and optical properties of phosphorus doped ZnO thin films
Author(s): Sushama Sushama; Punam Murkute; Hemant Ghadi; Subhananda Chakrabarti
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Paper Abstract

Wide bandgap of 3.37 eV and large exciton binding energy of 60 meV inherited by ZnO has attracted a lot of attention in order to establish it as a potential candidate for the optoelectronic devices. The main challenge encountered for its efficient utilization is default n-type behaviour of ZnO due to the existence of native donor defects. Therefore, achieving p-type behaviour has been a tough job and significant efforts have been made by the research community over the last couple of decades in this direction. Observing the drawbacks shown by the mono-doped samples in achieving p-type ZnO, co-doping has emerged out to be a promising technology with the benefits of increasing dopant solubility and reducing ionization energy. In this report, we have studied the effects of variation in boron implantation dose by varying implantation time to 2 and 4 s on the behaviour of phosphorus implanted (implantation time of 70 s) ZnO thin films, using plasma immersion ion implantation (PIII) technique. Samples were annealed at 800°C for 10 s in oxygen ambient. High resolution X-ray diffraction (HRXRD) showed enhanced phosphorus solubility for 4 s boron co-doped sample. Improved P-O bonding was observed for higher boron co-doped sample from high resolution X-ray photoelectron spectroscopy (HRXPS) measurement. Low temperature photoluminescence (PL) spectra demonstrated donor-acceptor pair (DAP) and free acceptor (FA) peaks at around 3.24 and 3.31 eV, respectively with 4 s boron co-doped sample showing dominant FA peak indicating improved acceptor based optical emission for it.

Paper Details

Date Published: 3 September 2019
PDF: 8 pages
Proc. SPIE 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, 1108926 (3 September 2019); doi: 10.1117/12.2530090
Show Author Affiliations
Sushama Sushama, Indian Institute of Technology Bombay (India)
Punam Murkute, Indian Institute of Technology Bombay (India)
Hemant Ghadi, The Ohio State Univ. (United States)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)


Published in SPIE Proceedings Vol. 11089:
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI
Balaji Panchapakesan; André-Jean Attias, Editor(s)

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