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Proceedings Paper

Modified vertical Bridgman technique for GaAs crystal growth
Author(s): Jiayue Xu; Renying Sun; Shiji Fan; Guangyu Zhang
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Paper Abstract

In the present work, a modified vertical Bridgman technique for GaAs crystal is developed. The VB configuration in prototype includes a quartz ampoule and a quartz crucible. The quartz ampoule was sealed in order to prevent volatilization of components. Because the decomposition pressure of GaAs ia about 1 atm. at its melting point, the quartz ampoule can keep its shape under 1300 degrees Celsius in air atmosphere during GaAs growth. Seeded 25 mm diameter crystals are grown at the rate of about 0.1 - 0.6 mm/hr under the temperature gradient about 10 degrees Celsius/cm at the solid-liquid interface, and electrical properties of as-grown GaAs crystal are discussed.

Paper Details

Date Published: 3 October 1996
PDF: 7 pages
Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252979
Show Author Affiliations
Jiayue Xu, Shanghai Institute of Ceramics (China)
Renying Sun, Shanghai Institute of Ceramics (China)
Shiji Fan, Shanghai Institute of Ceramics (China)
Guangyu Zhang, Shanghai Institute of Ceramics (China)


Published in SPIE Proceedings Vol. 2897:
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications
Manfred Eich; Bruce H. T. Chai; Minhua Jiang, Editor(s)

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