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Proceedings Paper

Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors
Author(s): Xiaolu Yin; Yi Yang; Yen-Fu Liu; Jiong Hua; Andrei Sokolov; Dan Ewing; Paul J. De Rego; Kaizhong Gao; Sy-Hwang Liou
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Paper Abstract

The development of high-sensitivity magnetic field sensors at low frequencies and ambient temperatures is of great importance for many practical applications, where different aspects of the sensor performance need to be considered. In this paper, it is presented that by tuning magnetic nanostructures of the free layers in magnetic tunnel junctions, widedynamic-range or ultra-high-sensitivity tunneling magnetoresistive sensors can be obtained. Tunneling magnetoresistive sensors with a linear response from -75 mT to +75 mT are demonstrated. Also, it is demonstrated that an optimized ultra-high-sensitivity magnetic sensor with a sensitivity of 57,790 %/mT can be achieved. This sensitivity is currently the highest among all magnetoresistive sensors that have been reported. The estimated noise of our magnetic sensor is 2.3 pT/Hz1/2 at 1 Hz and 190 fT/Hz1/2 at 100 Hz respectively. This tunneling magnetoresistive sensor dissipates only 25 μW of power when it operates under an applied voltage of 1 V at room temperature.

Paper Details

Date Published: 16 September 2019
PDF: 10 pages
Proc. SPIE 11090, Spintronics XII, 110903H (16 September 2019); doi: 10.1117/12.2529569
Show Author Affiliations
Xiaolu Yin, Western Digital Corp. (United States)
Yi Yang, Univ. of Nebraska-Lincoln (United States)
Yen-Fu Liu, Univ. of Nebraska-Lincoln (United States)
Jiong Hua, Univ. of Nebraska-Lincoln (United States)
Andrei Sokolov, Univ. of Nebraska-Lincoln (United States)
Dan Ewing, Department of Energy’s National Security Campus (United States)
Paul J. De Rego, Department of Energy’s National Security Campus (United States)
Kaizhong Gao, International Business and Technology Service Corp. (United States)
Sy-Hwang Liou, Univ. of Nebraska-Lincoln (United States)

Published in SPIE Proceedings Vol. 11090:
Spintronics XII
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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