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Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission
Author(s): Tomasz J. Ochalski; Juan S. D. Morales; Shumithira Gandan; Diana L. Huffaker; Hyunseok Kim; Liam O'Faolain
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Paper Abstract

In this work, we experimentally study the carrier and refractive index dynamics of InGaAs nanopillar grown on a Si on insulator (SOI) substrate. The recombination process of the InGaAs NP is characterized with different optical techniques. Temperature dependent photoluminescence (PL) at 0.5mW excitation power is carried out to determine the influence of temperature on carrier dynamics. The radiative recombination lifetime has been studied at 7K from time-resolved photoluminescence (TRPL) experiments at a certain excitation power. The optimal combination of pitch (separation between NPs) and diameter in the growth process of this nanostructure has also been measured. These results will contribute to further optimization of the InGaAs nanolaser for integration of III-V optoelectronics on SOI substrates.

Paper Details

Date Published: 12 September 2019
PDF: 5 pages
Proc. SPIE 11081, Active Photonic Platforms XI, 110812B (12 September 2019); doi: 10.1117/12.2529494
Show Author Affiliations
Tomasz J. Ochalski, Cork Institute of Technology (Ireland)
Tyndall National Institute (Ireland)
Juan S. D. Morales, Cork Institute of Technology (Ireland)
Tyndall National Institute (Ireland)
Shumithira Gandan, Cork Institute of Technology (Ireland)
Tyndall National Institute (Ireland)
Diana L. Huffaker, Univ. of California, Los Angeles (United States)
Hyunseok Kim, Univ. of California, Los Angeles (United States)
Liam O'Faolain, Cork Institute of Technology (Ireland)
Tyndall National Institute (Ireland)


Published in SPIE Proceedings Vol. 11081:
Active Photonic Platforms XI
Ganapathi S. Subramania; Stavroula Foteinopoulou, Editor(s)

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