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Proceedings Paper

X-ray diffraction analysis of self-organized InAs quantum dots
Author(s): Yan Zhuang; Y.T. Wang; W.Q. Ma; W. Wang; X.P Yang; Zhige Chen; D.S. Jiang; H.Z. Zheng
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Paper Abstract

A series sample of GaAs/InAs/GaAs was studied by double crystal x-ray diffraction and the investigation based on the x-ray dynamical theory was used to analyze the x-ray diffraction results. As the thickness of InAs layer exceeded 1.7 monolayer, 3-dimensional InAs islands occurred. Pendellosung fringes were shift. A multilayer structure model is proposed to describe the strain status in the InAs islands and the sample and a good agreement is obtained between the experimental and theoretical curves.

Paper Details

Date Published: 3 October 1996
PDF: 5 pages
Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252939
Show Author Affiliations
Yan Zhuang, Institute of Semiconductors (China)
Y.T. Wang, Institute of Semiconductors (China)
W.Q. Ma, Institute of Semiconductors (China)
W. Wang, Institute of Semiconducator (China)
X.P Yang, Institute of Semiconductors (China)
Zhige Chen, Institute of Semiconductors (China)
D.S. Jiang, Institute of Semiconductors (China)
H.Z. Zheng, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 2897:
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications
Manfred Eich; Bruce H. T. Chai; Minhua Jiang, Editor(s)

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