Low dark current and/or high operating temperature are the main motivations behind the nBn detector structures where removing the valence band discontinuity is usually an important design challenge. With the utilization of the bias polarity, these structures can also be easily designed as dual-band detectors and in this study, a dual-band (MWIR / LWIR) HgCdTe nBn detector configuration has been numerically examined. Valence band barrier suppression has been obtained with the delta-doped and compositional graded layers similar to the recent single band studies.

Date Published: 9 September 2019
PDF: 7 pages
Proc. SPIE 11129, Infrared Sensors, Devices, and Applications IX, 1112903 (9 September 2019); doi: 10.1117/12.2529240

Published in SPIE Proceedings Vol. 11129:
Infrared Sensors, Devices, and Applications IX
Paul D. LeVan; Priyalal Wijewarnasuriya; Ashok K. Sood, Editor(s)