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Proceedings Paper

Two-dimensional van der Waals heterojunction diode for multiband photo detection (Conference Presentation)
Author(s): Jongtae Ahn; Hyun Tae Choi; Do Kyung Hwang

Paper Abstract

2D layered nanomaterials for semiconductor channel have recently been attracting great attentions from researchers in many possibilities of future applications such as high speed electronics, flexible electronics, and immunity of short channel effects in scale-down transistors. Among many 2D materials molybdenum disulfide (MoS2) is known as a pacesetting material, since it has displayed excellent carrier mobility, a high on/off current ratio, and a good subthreshold swing in a field-effect transistor (FET) form as a 2D n-type channel. In contrast to MoS2, MoTe2 is p-type 2D nanoflake and it has an appropriate bandgap for both visible and infrared light photodetection. Here, we have fabricated 2D WSe2/MoS2 and MoTe2/MoS2 multilayers van der Waals heterojunction PN diode and its application for visible-near infrared broadband multi-detection. The MoTe2/MoS2 PN diode shows excellent performance with an ideality factor of 1.7 and high rectification (ON/OFF) ratio of over 104. This PN diode exhibits spectral photo-responses from ultraviolet (405 nm) to near infrared (1310 nm) with obvious photovoltaic behaviors. In addition to the static behavior, photocurrent switching behaviors are clearly observed under periodic illuminations at up to 100 KHz. WSe2/MoS2 PN diode demonstrate excellent static and dynamic device performances at a low voltage of 3 V, with an ON/OFF current ratio higher than 106, ideality factors of 1.5, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 180 mA W–1. The two types of devices show a linear response within optical power density range from 10-5 Wcm-2 to 1 Wcm-2.

Paper Details

Date Published: 9 September 2019
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Proc. SPIE 11085, Low-Dimensional Materials and Devices 2019, 110850M (9 September 2019);
Show Author Affiliations
Jongtae Ahn, Korea Institute of Science and Technology (Korea, Republic of)
Yonsei Univ. (Korea, Republic of)
Hyun Tae Choi, Korea Institute of Science and Technology (Korea, Republic of)
Do Kyung Hwang, Korea Institute of Science and Technology (Korea, Republic of)


Published in SPIE Proceedings Vol. 11085:
Low-Dimensional Materials and Devices 2019
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov, Editor(s)

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