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Proceedings Paper

High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals
Author(s): V. Kopach; O. Kopach; A. Kanak; L. Shcherbak; P. Fochuk; A. E. Bolotnikov; R. B. James
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Paper Abstract

High temperature Hall-effect investigations were used to study the change of the concentration and mobility of charge-carriers in Cd0.85Mn0.10Zn0.05Te and Cd0.85Mn0.10Zn0.05Te: In crystals grown by the vertical Bridgman technique. The Cd0.85Mn0.10Zn0.05Te and Cd0.85Mn0.10Zn0.05Te: In samples are characterized by optical and electrical measurements, and by IR-microscopy. We determined that the value of band gap increase with the Mn and Zn amount increasing in the Cd1-x-yMnxZnyTe crystals. We also show that after the high-temperature Hall-effect measurements performed under Cd overpressure the both crystals resistivity increase from 104 Ohm×cm to 106 Ohm×cm, and amount and size of Te inclusions decrease. According to the results of the high temperature Hall-effect investigations the temperatures and Cd vapor pressures intervals were established in which Indium plays major role and controls the concentration of charge carriers.

Paper Details

Date Published: 9 September 2019
PDF: 8 pages
Proc. SPIE 11114, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI, 111141P (9 September 2019);
Show Author Affiliations
V. Kopach, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
O. Kopach, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
A. Kanak, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
L. Shcherbak, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
P. Fochuk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
A. E. Bolotnikov, Brookhaven National Lab. (United States)
R. B. James, Savannah River National Lab. (United States)


Published in SPIE Proceedings Vol. 11114:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI
Ralph B. James; Arnold Burger; Stephen A. Payne, Editor(s)

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