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Effect of substrate temperature variation on the structural and optical properties of self assembled InAs quantum dots
Author(s): Abhijeet Aanand; Suryansh Dongre; Sanowar A. Gazi; Debabrata Das; Debiprasad Panda; Subhananda Chakrabarti
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Paper Abstract

The effect of substrate temperature variation on properties of InAs/GaAs Quantum Dots has been studied. Increase in substrate temperature during growth leads to blue-shift in the PL spectrum which becomes fairly evident after a threshold substrate temperature. Beyond the threshold substrate temperature (beyond 500°C), the effects due to Indium desorption cannot be neglected and hence they contribute to poor optical quality of dots as evident from reduced integrated PL intensity on increasing substrate temperature. AFM measurements also corroborate these findings showing reduced dot size and higher dot density after threshold substrate temperature. We suggest an optimum substrate temperature around 480 ″C for growth process.

Paper Details

Date Published: 9 September 2019
PDF: 8 pages
Proc. SPIE 11085, Low-Dimensional Materials and Devices 2019, 110851D (9 September 2019); doi: 10.1117/12.2529049
Show Author Affiliations
Abhijeet Aanand, Indian Institute of Technology Bombay (India)
Suryansh Dongre, Indian Institute of Technology Bombay (India)
Sanowar A. Gazi, Indian Institute of Technology Bombay (India)
Debabrata Das, Indian Institute of Technology Bombay (India)
Debiprasad Panda, Indian Institute of Technology Bombay (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)


Published in SPIE Proceedings Vol. 11085:
Low-Dimensional Materials and Devices 2019
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov, Editor(s)

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