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Proceedings Paper

Improving the quantum yield of ultra-small size CdSe quantum dots through Zn doping and silica coating
Author(s): Chun-Ru Huang; Shu-Ru Chung
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Paper Abstract

The ultra-small size of CdSe quantum dots (US-CdSe), which have both the surface state and band edge emissions, have been paid more attention owing to their unique optical properties. However, the low quantum yield (QY) and poor stability limits their application in solid-state lighting (SSL). In order to solving above problems, the US-CdSe were prepared by adding zinc element and coating with SiO2 through the colloidal chemistry method. The result shows that the QY of US-CdSe is improved from 18 to 36 % after zinc doped due to enhance the band edge emission intensity as well as the stability also can be improved after zinc doping. Moreover, the band edge and surface state emission peaks for all samples fix at 440 and 540 nm, respectively. The US-CdSe and CdSe:Znx QDs were stored at room temperature for 5 months, and the CdSe:Zn15 has the highest QY enhancement of 5.6%/month. The luminous intensity of CdSe:Znx QDs coated with SiO2 only decreases between 8 to 18 % depends on Zn concentrations, while the as-prepared US-CdSe decreases more than 18 % at 100 °C, meaning that the SiO2-coating sample have excellent thermal stability and more potential for SSL application.

Paper Details

Date Published: 3 September 2019
PDF: 8 pages
Proc. SPIE 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, 110890G (3 September 2019); doi: 10.1117/12.2529047
Show Author Affiliations
Chun-Ru Huang, National Formosa Univ. (Taiwan)
Shu-Ru Chung, National Formosa Univ. (Taiwan)

Published in SPIE Proceedings Vol. 11089:
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI
Balaji Panchapakesan; André-Jean Attias, Editor(s)

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