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Hybrid integration of active semiconductor devices with passive micro/nano optical structures for emerging applications
Author(s): Yeyu Zhu; Siwei Zeng; Yunsong Zhao; Lin Zhu
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Paper Abstract

We show a fully integrated, coherently combined laser system in the InP-Si3N4 hybrid platform. Coherent combining of two InP-based gain chips is obtained with a combining efficiency of ~92%. Besides, we demonstrate narrow-linewidth, tunable diode lasers in InP/GaAs-Si3N4 platform. The Si3N4 photonic integrated circuit performs as a tunable external cavity for both InP and GaAs gain chips simultaneously. Single frequency lasing at 1.55 and 1 um is simultaneously obtained on a single chip with the spectral linewidths of 18-kHz and 70-kHz respectively. We also obtain wide-angle beam steering by using the wide wavelength tuning range provided by dual-band diode lasers.

Paper Details

Date Published: 3 September 2019
PDF: 6 pages
Proc. SPIE 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, 1108908 (3 September 2019); doi: 10.1117/12.2528913
Show Author Affiliations
Yeyu Zhu, Clemson Univ. (United States)
Siwei Zeng, Clemson Univ. (United States)
Yunsong Zhao, Clemson Univ. (United States)
Lin Zhu, Clemson Univ. (United States)


Published in SPIE Proceedings Vol. 11089:
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI
Balaji Panchapakesan; André-Jean Attias, Editor(s)

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