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Low dark current diffusion limited planar type InGaAs photodetectors
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Paper Abstract

In this work, we design and produce 1280x1024 format InGaAs based planar type detectors with 15μm pixel pitch. We have obtained diffusion current limited low dark current (~10fA) and high responsivity (1.08A/W at 1.55μm) values at room temperature conditions. Moreover, dark current modeling is performed using diffusion, generation and recombination (GR) and trap assisted tunneling (TAT) current mechanisms. Ideality factor is extracted from forward bias characteristics. Excellent match between modeling and experimental data is reached. Also, temperature dependency of dark current is studied in 10°C – 60°C ranges. The area and perimeter related dark current components are differentiated using test detectors with changing diameters that are placed next to the detector array structure. Experimental data shows good agreement with theoretical expectations.

Paper Details

Date Published: 9 September 2019
PDF: 6 pages
Proc. SPIE 11129, Infrared Sensors, Devices, and Applications IX, 111290D (9 September 2019); doi: 10.1117/12.2528666
Show Author Affiliations
M. Halit Dolas, Bilkent Univ. (Turkey)
Middle East Technical Univ. (Turkey)
Okan Atesal, Bilkent Univ. (Turkey)
M. Deniz Caliskan, Bilkent Univ. (Turkey)
Alpan Bek, Middle East Technical Univ. (Turkey)
Ekmel Ozbay, Bilkent Univ. (Turkey)


Published in SPIE Proceedings Vol. 11129:
Infrared Sensors, Devices, and Applications IX
Paul D. LeVan; Priyalal Wijewarnasuriya; Ashok K. Sood, Editor(s)

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