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Growth and characterization of detector-grade CdZnTeSe by horizontal Bridgman technique
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Paper Abstract

We have investigated the effect of incorporation of Se into CdZnTe (CZT) matrix on x-ray response of single crystal direct conversion detectors. We used horizontal Bridgman technique for crystal growth. We have characterized the crystals using an array of diagnostics including photo-induced current transient spectroscopy (PICTS), electric field distribution using Pockels effect, and count rate response to high flux incident x-ray irradiation. We have demonstrated that the density of deep-level traps was significantly reduced by the addition of Se, resulting in more uniform electric field inside the crystal and an associated increase in x-ray count rate. The inclusion of Se within the CZT matrix, combined with additional optimization of the growth recipe enabled linear response at high incident x-ray flux.

Paper Details

Date Published: 9 September 2019
PDF: 7 pages
Proc. SPIE 11114, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI, 111141N (9 September 2019); doi: 10.1117/12.2528542
Show Author Affiliations
Aharon Yakimov, GE Global Research (United States)
David Smith, GE Global Research (United States)
Jongwoo Choi, GE Global Research (United States)
Stephen Araujo, GE Global Research (United States)


Published in SPIE Proceedings Vol. 11114:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI
Ralph B. James; Arnold Burger; Stephen A. Payne, Editor(s)

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