Share Email Print

Proceedings Paper

Transition metal dichalcogenide material based tunneling field-effect transistor for label free bio-sensing application
Author(s): Prabhat Kumar Dubey; Brajesh Kumar Kaushik
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Transition metal dichalcogenides (TMDs) are among the most appealing candidates for sensor applications due to their atomically thin layered structure, dangling bond free surface, and novel physical properties. Recently, TMD materials have been used to improve the performance of devices like metal-oxide semiconductor field-effect transistors (MOSFETs) and tunneling field-effect transistors (TFETs). TMD material based TFETs show a steep subthreshold slope (SS) due to the better gate control on the channel and band-to-band tunneling transport. This makes the TMD TFETs a potential candidate for sensing devices. The steep SS of TFETs and higher gate control is useful for detecting charged biomolecules such as protein and DNA. The presented device shows a SS of 50 mV/decade for 5 decade change in drain current and a sensitivity (ΔIDS/IDS) of 2.11 for a 5 mV change in gate voltage. Biomolecules were detected by measuring the variation of the drain current due to bimolecular charge.

Paper Details

Date Published: 9 September 2019
PDF: 5 pages
Proc. SPIE 11087, Biosensing and Nanomedicine XII, 110870U (9 September 2019); doi: 10.1117/12.2528301
Show Author Affiliations
Prabhat Kumar Dubey, Indian Institute of Technology Roorkee (India)
Brajesh Kumar Kaushik, Indian Institute of Technology Roorkee (India)

Published in SPIE Proceedings Vol. 11087:
Biosensing and Nanomedicine XII
Hooman Mohseni; Massoud H. Agahi, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?