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Proceedings Paper • Open Access

Highly controlled lateral heterostructures in 2D transition metal dichalcogenides for optoelectronic applications (Conference Presentation)
Author(s): Hossein Taghinejad; Ali A. Eftekhar; Ali Adibi

Paper Abstract

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are an excellent candidate for realization of a large range of optoelectronic devices on a wide variety of substrates. In this talk, a new approach based on alloying is presented for the formation of lateral heterostructures in 2D TMDCs with unprecedented control over the in-plane device profile and operation wavelength. This approach can be used for post-growth tuning of the optoelectronic properties of the planar structures as well as fabrication of optoelectronic devices such as planar diodes, light emitters, and photodetectors with exotic characteristics. Details of the material formation and properties as well as device fabrication and characterization in such 2D structures will be presented and discussed. In addition, the potential of this platform for the formation of advanced quantum nanostructures structures such as quantum dots and quantum wires will be discussed.

Paper Details

Date Published: 9 September 2019
Proc. SPIE 11081, Active Photonic Platforms XI, 1108110 (9 September 2019); doi: 10.1117/12.2528286
Show Author Affiliations
Hossein Taghinejad, Georgia Institute of Technology (United States)
Ali A. Eftekhar, Georgia Institute of Technology (United States)
Ali Adibi, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 11081:
Active Photonic Platforms XI
Ganapathi S. Subramania; Stavroula Foteinopoulou, Editor(s)

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