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Balancing aging mechanisms in organic field-effect transistors
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Paper Abstract

We developed a simple method to improve the stability of organic field-effect transistors (OFETs) with bilayer gate dielectrics. The bilayer gate dielectric comprises an amorphous fluoropolymer (CYTOP) layer and an Al2O3-HfO2 nanolaminate (NL) grown by the atomic layer deposition (ALD) technique. In the OFETs with bilayer gate dielectrics, two aging mechanisms exist, and they cause the shifts of threshold voltage in opposite directions during long-term operation. By engineering the bilayer gate dielectric, the effects of these two mechanisms can compensate, leading to devices with remarkable operational stability that is comparable or superior to that of commercial inorganic counterparts. The NL grown by ALD shows excellent encapsulation property and improves the environmental stability of the OFETs. The devices are tested by exposing the devices to high temperature and high moisture conditions (i.e., the standard 85/85 condition, meaning 85°C and 85% relative humidity). The results of OFETs with CYTOP/NL bilayer gate dielectrics are presented and compared to those OFETs with Al2O3 gate dielectrics.

Paper Details

Date Published: 30 August 2019
PDF: 6 pages
Proc. SPIE 11097, Organic and Hybrid Field-Effect Transistors XVIII, 110970D (30 August 2019); doi: 10.1117/12.2528071
Show Author Affiliations
Xiaojia Jia, Georgia Institute of Technology (United States)
Canek Fuentes-Hernandez, Georgia Institute of Technology (United States)
Cheng-Yin Wang, Georgia Institute of Technology (United States)
Youngrak Park, Georgia Institute of Technology (United States)
G. Kim, Georgia Institute of Technology (United States)
Bernard Kippelen, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 11097:
Organic and Hybrid Field-Effect Transistors XVIII
Iain McCulloch; Oana D. Jurchescu, Editor(s)

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