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Proceedings Paper

Investigation of InAs–based devices for topological applications
Author(s): Matteo Carrega; Stefano Guiducci; Andrea Iorio; Lennart Bours; Elia Strambini; Giorgio Biasiol; Mirko Rocci; Valentina Zannier; Lucia Sorba; Fabio Beltram; Stefano Roddaro; Francesco Giazotto; Stefan Heun
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Paper Abstract

Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin–orbit component. Here, we report on InAs-based devices both in one–dimensional and two–dimensional configurations. In the former, low-temperature measurements on a suspended nanowire are presented, inspecting the intrinsic spin–orbit contribution of the system. In the latter, Josephson Junctions between two Nb contacts comprising an InAs quantum well are investigated. Supercurrent flow is reported, with Nb critical temperature up to Tc ∼ 8 K. Multiple Andreev reflection signals are observed in the dissipative regime. In both systems, we show that the presence of external gates represents a useful knob, allowing for wide tunability and control of device properties, such as spin–orbit coherence length or supercurrent amplitude.

Paper Details

Date Published: 16 September 2019
PDF: 10 pages
Proc. SPIE 11090, Spintronics XII, 110903Z (16 September 2019);
Show Author Affiliations
Matteo Carrega, Istituto Nanoscienze-CNR (Italy)
Scuola Normale Superiore (Italy)
Stefano Guiducci, Istituto Nanoscienze-CNR (Italy)
Scuola Normale Superiore (Italy)
Andrea Iorio, Istituto Nanoscienze-CNR (Italy)
Scuola Normale Superiore (Italy)
Lennart Bours, Istituto Nanoscienze-CNR (Italy)
Scuola Normale Superiore (Italy)
Elia Strambini, Istituto Nanoscienze-CNR (Italy)
Scuola Normale Superiore (Italy)
Giorgio Biasiol, IOM CNR (Italy)
Mirko Rocci, Istituto Nanoscienze-CNR (Italy)
Scuola Normale Superiore (Italy)
Massachusetts Institute of Technology (United States)
Valentina Zannier, Istituto Nanoscienze-CNR (Italy)
Scuola Normale Superiore (Italy)
Lucia Sorba, Istituto Nanoscienze-CNR (Italy)
Scuola Normale Superiore (Italy)
Fabio Beltram, Istituto Nanoscienze-CNR (Italy)
Scuola Normale Superiore (Italy)
Stefano Roddaro, Istituto Nanoscienze-CNR (Italy)
Scuola Normale Superiore (Italy)
Univ. di Pisa (Italy)
Francesco Giazotto, Istituto Nanoscienze-CNR (Italy)
Scuola Normale Superiore (Italy)
Stefan Heun, Istituto Nanoscienze-CNR (Italy)
Scuola Normale Superiore (Italy)


Published in SPIE Proceedings Vol. 11090:
Spintronics XII
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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